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Raising the Bar for RF Components

Unlock the full potential of next-generation wireless communications.

Power Amplifiers

Our proprietary PA designs lead the industry, delivering unmatched efficiency and linearity from sub-GHz to mmWave bands.

Part Number	Description	Frequency (GHz)	Gain (dB)	Psat (dBm)	PAE (%)	Supply (V)	Availability	Package
FCM1401	14GHz CMOS PA for Ku-band applications	12.4 - 16	22	19.2	47	1.8	In stock	QFN/EVB
FCM2801	28 GHz CMOS PA for 5G mmWave application	23 - 36	22	19.5	53	1.8	IP Ecosystem	Bare die
FCM3901	39 GHz CMOS PA for 5G mmWave application	32 - 44	19	18.3	45	1.8	IP Ecosystem	Bare die
FCM2802	28 GHz PA for 5G mmWave application	23 - 36	22	19	54	1.8	Coming soon	Bare die
FCM3902	39 GHz PA for 5G mmWave application	32 - 44	21	23	40	2	Coming soon	Bare die
FGN1901	19GHz 2W GaN PA for Ka-band applications	18 - 21	22	33	45	18	Coming soon	QFN/EVB
FGN1902	19GHz 4W GaN PA for Ka-band applications	17.7 - 21	20	36	45	20	Coming soon	QFN/EVB
FGN1401	14GHz 5W GaN PA for Ku-band applications	12 - 15	23	37	48	20	Coming soon	QFN/EVB
FGN0801	8GHz 20W GaN PA for X-band applications	6 - 8.5	30	43	50	24	Coming soon	QFN/EVB

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World Record Efficiency

Falcomm’s process agnostic Dual-Drive Power Amplifier architecture delivers world
record efficiency and enhanced thermal management, providing superior performance.

More RF Power

Less Heat

Abstract CPU Chip on Motherboard Cooling

Plug and Play IP blocks available for licensing

Wider Bandwidth

Abstract Tech Data and Bandwidth Background

Small silicon footprint

Design flow that accurately models within 2% of measurements

50 Ohm matched in and out

Abstract Tech Radio Waves Background

Frequency and process agnostic

Close-up view of Falcomm’s RF design lab with engineers working at test benches equipped with advanced signal analyzers, oscilloscopes, and prototyping hardware.

Silicon proven technology

Redefining Wireless Communication

Improving PA efficiency in an RF system from 30% to 50% results in:

70% more RF output power

30% less heat

Smaller batteries and cooling systems

More RF power = More coverage

Increasing PA power efficiency enhances system SwapC and widens coverage.

Full Turn-Key Solutions,
Fully Tested and Validated

From mass production RF components to custom design services, we are here to meet your mission.

Full Turn-Key Design

Consultation on performance, functionality, and implementation

RF/mmWave IC design

3D EM package simulations

Consulting

mmWave/RF Expertise

High-efficiency RF power amplifiers

Phase-shifters, VGAs, and other beamforming IP

Low Noise Amplifiers

T/R switches

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Testing, Verification, and Qualification

State-of-the-art in-house electronic measurement lab with RF testing capabilities

RF/mmWave measurement capabilities from DC to 150GHz, including CW, small signal, modulation, and VSWR

Engineer testing an RF device using a vector network analyzer and signal generator on a lab bench.

Semiconductor Manufacturing

In-house prototype assembly and test

Full-scale fabrication, dicing, and packaging capabilities through our strategic OSAT partners

Mil-Spec up-screening and space qualification

Prototype RF chip designed for 5G applications, integrated onto a test board with SMA connectors.

Our technology is designed and manufactured in America.

Through partnerships with U.S. foundries and OSAT facilities, our domestic supply chain is ready to meet your needs.

Scalable, with production capacities from 10K-10M units

Flexible to your requirements and network

Transparent, providing visibility and confidence

Contact us

Have questions or interested in our products/ services? Reach out to our team:

info@myfalcomm.com

1375 Peachtree St NE, Atlanta, GA 30309

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